STMicroelectronics has decided to further expand its production facilities with the opening of a new silicon carbide (SiC) semiconductor fab in Catane, Sicily, Italy. With a total investment of up to 5 billion euros, the fab will specialize in the production of silicon carbide chips, a key technology for electric vehicles with strong growth potential.
According to the report, the move was made by STMicroelectronics for the Balancing Group in Italy and France following the 7.5 billion euro wafer fab plan with GF in Crolles, southeastern France.
In June, STMicroelectronics announced that it would establish a 200mm silicon carbide device manufacturing joint venture with Sanan Optoelectronics in Chongqing, China, which is expected to start production in the fourth quarter of 2025 and is expected to generate more than $5 billion in silicon carbide revenue by 2030.
Silicon carbide is a wide bandgap semiconductor material that is capable of operating at higher voltages, frequencies, and temperatures than traditional silicon-based semiconductors, significantly reducing power losses and improving the overall efficiency of the system. These properties make silicon carbide an important driver of innovation in the field of electric vehicles, especially in core components such as inverters, on-board chargers, and motor controllers.
As the market leader in SiC power MOSFETs, STMicroelectronics is committed to integrating advanced design technologies and processes to fully exploit the energy savings potential of silicon carbide and accelerate the transformation of the electric vehicle and industrial markets. With the acceleration of the development of the electric vehicle market, many vehicle manufacturers and supporting suppliers have begun to adopt silicon carbide technology to improve the performance and endurance of products.