With the continuous development of science and technology, new storage technologies are also emerging, among which magnetic random access memory (MRAM) has become a hot spot in the memory industry due to its unique advantages. Recently, Zhejiang Chituo Technology Co., Ltd. (hereinafter referred to as "Chituo Technology") has successfully developed a series of products such as independent memory chips and embedded IP, and its technical level is in the first echelon in the world, which undoubtedly opens up a new path for the application of MRAM new technology.Recently, Zhejiang Chituo Technology Co., Ltd. (hereinafter referred to as "Chituo Technology") B round financing signing ceremony was held. At the meeting, the Financial Holding Investment Company, Chengtong Mixed Reform, Chengtong National Survey, National Survey, Guoxin Comprehensive Reform, Huzhou Xinchuang, Shangqi Capital, etc. signed a capital increase contract with Chituo Technology. According to reports, Chituo Technology has a domestic leading, world-class 12-inch new memory chip pilot line, established a number of advanced process platforms such as 28nm and 40nm, independently developed and mastered a full set of key technologies for MRAM design and manufacturing, and successfully developed independent memory chips and embedded IP and other products, with a technical level in the first echelon in the world, and is a leading new high-end memory chip design and manufacturing manufacturer in China.
MRAM is a new type of non-volatile memory that uses the properties of magnetic materials to store data by changing the direction of the magnetic moment. Compared with traditional DRAM and SRAM, MRAM has higher read and write speeds, lower power consumption, longer service life, and better endurance. These advantages make MRAM have a wide range of application prospects in the fields of Internet of Things, artificial intelligence, industrial control and automotive electronics.
As a leading new high-end memory chip design and manufacturer in China, Chituo Technology has independently developed and mastered a full set of key technologies for MRAM design and manufacturing, and has successfully developed a series of products such as stand-alone memory chips and embedded IP. This not only marks an important breakthrough in the research and development of MRAM technology in China, but also wins more voice in the competition of China's global memory market.
However, despite its many advantages, MRAM still faces some challenges in its commercial application. First of all, the relatively high manufacturing cost of MRAM limits its application in mass production. Secondly, the stability and reliability of MRAM need to be further improved. In addition, the data retention time of MRAM is relatively short, which is a challenge for applications that need to store data for long periods of time.
Still, with the continuous advancement of technology, it is possible that these problems can be solved. For example, the manufacturing cost of MRAM can be reduced by adopting new materials and processes;By optimizing the design and improving the manufacturing process, the stability and reliability of MRAM can be improvedBy improving the data retention time, the application scenarios of MRAM can be expanded.
Globally, there are also a number of companies that have made significant progress in the research and development of MRAM technology. For example, Intel Corporation in the United States and Hitachi Corporation in Japan have both made important breakthroughs in the research and development of MRAM technology. Intel has successfully developed MRAM technology based on the spin torque transfer mechanism, while Hitachi has successfully developed MRAM technology based on the spin torque transfer mechanism. The research results of these companies not only promote the development of MRAM technology, but also provide a strong impetus for the development of the global memory market.