2023 isMemory chipsIn the most difficult year for manufacturers, the imbalance between supply and demand led to high inventories, and manufacturers had to reduce prices to increase sales. SamsungskHynixwithMicronand other industry giants have suffered huge losses, and the data shows that in 2023 alone, these three companies are inMemory chipsThe loss of the sector amounted to 150 billion yuan. However, the rise of domestic storage manufacturers has brought a glimmer of hope to the market, and there is no domestic productionMemory chipsThe market price reduction will not be so large. Therefore, domesticMemory chipsThe development of the development has attracted much attention.
YMTCwithChangxin storageIt is one of the two largest in ChinaMemory chipsgiants, they each focus on NANDFlashand DRAM memory market. In the original threeMemory chipsIn the base, Jinhua is affected by itMicronThe impact is stagnant, whileYMTCwithChangxin storageContinue to make positive breakthroughs. YMTCIt pioneered the "crystal stack" technology, and the iterative development from 64 layers to 232 layers quickly caught upSamsungwithMicronand other international giants, becoming the first in the world to achieve 232 layers of 3DNANDFlashMass-produced manufacturers. However, due to the repression of the United States,YMTCabove the 232nd floorFlashEquipment and technology are blocked. Currently, the company has only a handful of 232 floorsFlashproduction line, and mainly produces products with 128 layers of technology. Recently, there were ** reports thatYMTCThe launch of a 120-layer technology product, although the authenticity is not yet clear, shows that manufacturers are continuing to innovate and break through. In terms of market share and production capacity,YMTCIt currently accounts for about 5% of the global market and about 6% of the world's total production capacity, but the company is expanding its production capacity and plans to reach a global market share of 15%-20% in the future.
Changxin storageIn terms of DDR memory, the mass production of DDR5 memory has been realized, and it is at the leading level in the industry. However, from the perspective of the process, Changxin is still lagging behindSamsungwithskHynixThe actual process of the latter has reached about 14nm, while Changxin has been stuck at 21nm and 19nm before. In addition, the United States has issued a ban on China's DRAM memory, prohibiting the export of equipment or technology of 18nm and below. However, recent ** reports have reported thatChangxin storageMass production began 18DRAM with 5nm processChipsThe monthly output is as high as 100,000 piecesWafers。At the same time, Changxin has launched the second phase of the construction plan, which is expected to be completed by the end of 2024, when the production capacity will reach 140,000 piecesWafers, accounting for 10% of the world's total DRAM production capacity. visible, despite the DRAM memory and NANDFlashThe field has been hit, but domestic manufacturers are still trying to break through technology and production capacity, and their competitiveness is gradually improving. This is also why 2023 is domesticMemory chipsThe reason why manufacturers have to cut prices sharply is that because market competition has intensified, Chinese manufacturers have a cost advantage and can only compete for market share by cutting prices. I hope that in the future, it will be made in ChinaMemory chipsManufacturers can continue to innovate and increase production capacity and market share, so that consumers can really benefit.
YMTCIt is the leading NAND in ChinaFlashChips**One of the merchants, using the self-developed "crystal stack" technology, to achieve from 64 layers to 232 layersFlashParticle stacking, surpassedSamsungwithMicronand other international giants, becoming the first in the world to launch 232-layer 3DNANDFlashof mass production manufacturers. However, due to the lockdown measures in the United States,YMTCOnly a small number of 232 floors can be maintainedFlashproduction line, and mainly produces products with 128 layers of technology. Recently, there have been reportsYMTCThe launch of a product with 120-layer technology, while the authenticity of which is yet to be verified, shows that the company continues to make progress on technological breakthroughs. Although the market share and production capacity still need to be improved, butYMTCWe are committed to continuously expanding our production capacity and aim to achieve a global market share of 15%-20% in the future. This manifestsYMTCUnremitting efforts in the field of technology and market are also for the domesticMemory chipsThe rise of the industry brings hope.
Changxin storageIt is the leading DRAM memory in ChinaChips**One of the vendors, has achieved mass production of DDR5 memory, and is in the leading position in the industry. However, compared toSamsungwithskHynixand other international giants, Changxin still has a certain gap in the process process, and has been stuck at the 21nm and 19nm process level. In addition, the United States has issued a ban on China's DRAM memory, restricting the export of equipment and technology of 18nm and below. However, recent ** reports have reported thatChangxin storageMass production has begun 18DRAM with 5nm processChipsThe monthly output is as high as 100,000 piecesWafers。At the same time, Changxin has launched the second phase of the construction plan, which is scheduled to be completed by the end of 2024, when the production capacity will reach 140,000 piecesWafers, accounting for 10% of the world's total DRAM production capacity. This series of actions shows thatChangxin storageIt is accelerating the pace of innovation, improving the level of process and laying a solid foundation for its own development.
DomesticMemory chipsManufacturers are facing great difficulties and pressures, but they are still trying to break through the bottleneck of technology and production capacity, and gradually improve their market competitiveness. YMTCwithChangxin storageAs the two largest in ChinaMemory chipsGiants, through innovative breakthroughs and market expansion, respectively in NANDFlashand DRAM memory in the field of certain achievements. Despite the huge challenges faced by the United States such as repression and market competition, these difficulties have not stopped the countryMemory chipsThe pace of industrial development. On the contrary, these challenges have led to domestic productionMemory chipsManufacturers accelerate the pace of innovation to improve product performance and quality. With the continuous breakthrough of technology and the expansion of production capacity, domestic productionMemory chipsIt will gradually increase its market share and bring more affordable and competitive products to consumers. DomesticMemory chipsThe rise of the industry will have a positive impact on the entire industry, promoting the progress of technology and the development of the industry. Hope for the future domesticMemory chipsManufacturers can continue to break through innovation, increase production capacity and market share, and bring better product experience to consumers.