Fast Technology reported on February 17 that ASML has delivered the first high-NA EUV extreme ultraviolet lithography machine to Intel, which will be used for the manufacture of chips below the 2nm process, and TSMC and Samsung will also receive it in the future, which can directly reach the 1nm process.
So what about after that? According to the news, ASML is working on the next generation of Hyper NA lithography machine to continue Moore's Law.
ASML's first generation Low Na EUV lithography machine was only 033 Na (pore size value) and a critical size (CD) of 135nm, the minimum metal spacing is 26nm, and the inner connection spacing under a single ** is about 25-30nm, which is suitable for manufacturing 4 5nm process.
With double **, the inner connection spacing can be reduced to 21-24nm, and a 3nm process can be manufactured, such as TSMC N3B.
The second-generation EUV lithography machine has been increased to 055 Na, the critical size is reduced to 8nm, the minimum metal spacing is about 16nm, and 3-1nm can be manufactured, for example, Intel revealed that it will be in 1First use on the 4nm node.
In an interview, ASML CTO Martin Van den Brink confirmed that ASML is investigating the development of Hyper NA technology and continues to advance various lithography indicators, among which the NA value will exceed 07. It is expected to be completed around 2030.
It said that the new EUV lithography machine is suitable for making logic processor chips, which are less expensive than high-NA dual**, and can also be used to make DRAM memory chips.
ASML has disclosed data that shows that the cost of a low-NA lithography machine is at least 1$8.3 billion, and the high NA lithography machine is even more 3Starting at $800 million.
According to the roadmap of the Microelectronics Research Center (IMEC), it should be possible to advance to A7 0. around 20307nm process, followed by A5 05nm、a3 0.3nm、a2 0.2nm, but that would have to happen around 2036.