GaN based reference design for a 1 6kW bidirectional microinverter

Mondo Technology Updated on 2024-02-01

This reference design demonstrates a GaN-based quad-input bidirectional 16kw microinverter. **Sales of TI Texas Instruments' full range of IC electronic components - SMIC provides you with the features, parameters and electronic components included in this design.

High power density.

High switching frequency to support small passive EMI filter elements.

Any channel can be used as a PV input or 48V battery storage.

Single-chip controller with a C2000 MCU (DC AC, DC DC, MPPT).

Good common-mode isolation with isolated DC DC topology.

Lower overall system solution cost.

1. TMS320F280039C—C2000 32-bit MCU with CLA, CLB, AES, and CAN-FD 120MHz 384KB Flash, FPU, and TMU

2. ISO6741—universal four-channel, 3 1 digital isolator.

3. LMG2100R044—100V with integrated driver and protection function 44m half-bridge GAN FET

4. LMG3522R050—650V 50M GaN FET with integrated driver, protection, and temperature reporting

5. OPA4388 — Quad, 10MHz, CMOS, Zero Drift, Zero Crossover, True RRIO Precision Op Amp.

6. LM5164 — 6V to 100V input, 1A synchronous DC DC buck converter with ultra-low IQ.

7. AMC1302 — 50mV input, precision current detection enhanced isolated amplifier.

8. UCC21540 — 5. with dual inputs, DT pins, and 8V UVLO in a DW or DWK package7KVRMS, 4A 6A dual-channel isolation gate.

If you need data sheets, sample testing, procurement, BOM matching and other needs, **Customer Service WeChat: 13310830171.

Microinverters

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