Samsung announced that it will partner with ARM to provide next-generation Arm Cortex-X CPUs based on the latest GAA (Gate-All-Around) architecture transistor technology to further improve performance and efficiency, and take the user experience to the next level. 
Samsung said the program builds on years of collaboration with millions of devices equipped with Arm CPU intellectual property (IP) that use a variety of process nodes provided by Samsung. Confident that a series of announcements and programs between Samsung and Arm will lay the foundation for innovation, Samsung has developed bold plans to provide 2nm GAA process for next-generation custom chips for data centers and infrastructure, as well as breakthrough artificial intelligence (AI) chiplet solutions that will revolutionize the future of the biotech smart mobile computing market.
Samsung mass-produced SF3E (3nm GAA) in June 2022 and introduced a new GAA-based transistor technology. In 2024, it is planned to bring the second-generation 3nm process technology called SF3 (3gap), which will use the "second-generation multi-bridge-channel field-effect transistor (MBCFET)" to further optimize the original SF3E, and then there will be a performance-enhancing SF3P (3gap+), which is more suitable for manufacturing high-performance chips. By 2025, Samsung will begin mass production of the SF2 (2nm) process.
GAA technology allows for further expansion of the device beyond the previous FinFET, improving power efficiency by reducing supply voltage levels and enhancing performance through higher drive current capability, and GAA implementation with nanosheet structures provides maximum design flexibility and scalability.