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IGBT overvoltage breakdown and overcurrent breakdown are two different fault phenomena.
IGBT overvoltage breakdown is when the IGBT is subjected to excessive voltage, and its surface breakdown occurs, resulting in device failure. This failure is usually caused by a design flaw in the device itself, a mistake in the manufacturing process, or an excessively high temperature in the environment in which it is used. Overvoltage breakdown can cause permanent damage to the device that cannot be repaired.
IGBT overcurrent breakdown refers to the breakdown of the surface of the IGBT when the current subjected to it exceeds its rated current, resulting in device failure. This failure is usually caused by factors such as poor device design, poor manufacturing process, or excessive temperature in the environment in which it is used. Overcurrent breakdown can cause temporary damage to the device, which can be repaired by replacing the device.
Therefore, in the process of using IGBTs, it is necessary to pay attention to the protection measures in both overvoltage and overcurrent cases to ensure the normal operation and prolonged service life of the device.