The global silicon carbide device market pattern is dominated by overseas giants, and overseas companies have a certain monopoly position in terms of technological progress and production capacity. According to the data, the market share is monopolized by overseas giants STMicroelectronics, Wolfspeed, Rohm, Infineon, Mitsubishi Electric, onsemi and other manufacturers, among which the largest silicon carbide device manufacturer is STMicroelectronics, which is the main supplier of Tesla's automotive silicon carbide devices, with a market share of 40%, followed by Infineon, with a market share of 22%. The global TOP6 occupies more than 95% of the market share.
Due to the military use of wide bandgap semiconductors, foreign countries have imposed technology embargoes and blockades on China, and the continuous development of the domestic SiC industry has put forward an urgent need for the domestic independence of core technologies and the realization of the safety and controllability of the first chain. The trend of independent and controllable has accelerated the domestic substitution process of wide bandgap semiconductor devices, and brought new opportunities for the development of wide bandgap semiconductor industry. In the field of wide bandgap semiconductors, downstream application companies have been adjusting the ** chain to support domestic enterprises. The upstream and midstream products of several domestic wide bandgap semiconductor companies have successively obtained downstream user verification opportunities, entered the ** chain of many key manufacturers, and gradually began the benign development of promoting production through sales.
In the future, with the increase in the penetration rate of silicon carbide devices in new energy vehicles, energy, industry, communications and other fields, the market scale of silicon carbide devices is expected to continue to expand, of which new energy vehicles and photovoltaics are important fields.
1. New energy vehicles: SiC devices are mainly used in PCU (power control unit, such as on-board DC DC) and OBC (charging unit), compared with SI devices, SiC devices can reduce the weight and volume of PCU equipment, reduce switching losses, and improve the working temperature and system efficiency of the deviceWhen OBC charging, the SiC device can improve the power level of the unit, simplify the circuit structure, increase the power density, and increase the charging speed.
2. Photovoltaic power generation field: SiC materials have lower on-resistance, gate charge and reverse recovery charge characteristics, the use of SiC-MOSFET or SiC-MOSFET and SiC-SBD combined photovoltaic inverter, the conversion efficiency can be increased from 96% to 99%+, the energy loss is reduced by 50%+, and the cycle life of the equipment is increased by 50 times.
New energy vehicles are the largest application market in the future. The global conductive SiC power device market is expected to reach $6.3 billion in 2027, with a CAGR of 34% from 2021 to 2027In 2027, the market size of conductive SiC power devices for new energy vehicles is expected to reach 5 billion US dollars, accounting for 79%. Semiconductors