STMicroelectronics announced that it has signed a long-term supply agreement with Li Auto for silicon carbide (SiC). Under the terms of the agreement, ST will supply Li Auto's silicon carbide MOSFETs to support Li Auto's strategic deployment into the high-voltage electric vehicle market.
According to reports, Li Auto's upcoming 800V high-voltage pure electric platform will use ST's third-generation 1200V SiC MOSFET technology in the electric drive inverter.
Meng Qingpeng, Vice President of Li Auto ** Chain, said: "Li Auto is committed to providing family users with luxury electric vehicles that exceed expectations. The signing of the SIC supply agreement with ST confirms Li Auto's firm decision to develop pure electric vehicle products. We are optimistic about our future collaboration with ST, the global leader in silicon carbide technology, which promises to be an innovative and successful partnership." ”
Zhiping Cao, Executive Vice President and President of STMicroelectronics China, said:"STMicroelectronics is a global leader in power semiconductors and wide bandgap technology, and a long-term supplier to many leading automakers and Tier 1 manufacturers. Our SiC agreement** with Li Auto marks another important step in building on our long-standing partnership in other automotive applications. ST is committed to supporting Li Auto to become the leading brand of high-end new energy vehicles in China, providing users with superior vehicle performance and range through our innovative SiC technology. "
Relevant information shows that at the Ideal Family Technology Day held by Li Auto in June this year, Li Auto released an 800V high-voltage platform 5C battery with a peak charging power of more than 500kW, a range of 400 kilometers in 9 minutes and 30 seconds, and a range of 600 kilometers in 22 minutes5C fast charging uses low internal resistance cells, which reduces heat production by 30%.