Recently, Anker, a leader in the fast charging industry, released an all-gallium nitride 120W charger, which adopts the world's first HFB architecture of Anker and Infineon, equipped with Power IQ40 Dynamic power distribution technology, combined with Anker's self-developed mini transformer through high-density stacking and layout design, means that GaN technology has been iterated to a new level.
The design style of the Anker GaN 120W charger is similar to its own super charging series, the body of the body is a PC black shell, the surface is matte, the output also has a silver decorative plate, the front of the body is printed with the Anker brand and the GanPrime logo, and the input is equipped with foldable pins, which is easy to carry and will not scratch other devices in the bag.
Infineon's HFB architecture is unveiled
The HFB (Hybrid-Flyback) architecture is Infineon's hybrid flyback architecture, which combines the traditional flyback topology with the high performance of resonant switching power supplies with half-bridge GaN devices to achieve a higher level of integration and higher efficiency. This HFB hybrid flyback architecture combines the advantages of flyback and LLC to create a new type of asymmetric half-bridge hybrid flyback topology.
Infineon's HFB architecture uses half-bridge and series capacitors to drive a conventional flyback transformer, with the main inductor and series capacitors of the flyback transformer forming a resonant loop that enables ZVS switching of the half-bridge switch and provides resonant power transfer during the demagnetization phase.
In normal operation mode, the charge cycle and the associated power are controlled by the peak current. The demagnetization stage is controlled by customization to ensure proper negative premagnetization to meet the ZVS conditions required for the half-bridge. Compared to other flyback topologies, this hybrid half-bridge flyback transformer requires less energy to store, effectively reducing the size of the transformer. At the same time, the hybrid flyback can achieve complete zero-voltage switching in the primary stage, zero-current switching in the secondary, and the leakage inductance energy of the transformer can further improve the efficiency.
Through the disassembly of the charging head network, it was found that the primary main controller of the charger is Infineon XDPS2201, which is a digital hybrid flyback controller with integrated 600 V depletion MOSFETs to support VCC charging, and integrated high-side (HS) and low-side (LS) MOSFET drivers. Zero-voltage switching (ZVS) mode is supported without the need for additional components, ensuring high efficiency, low system cost, and ultra-high power density design.
Infineon's XDPS2201 features peak current mode control for fast load response. Automatic switching to burst mode operation based on output current level, primary-side overvoltage protection, 75MW standby power consumption, configurable parameters via a single-pin UART interface, and a PG-DSO-14 package with reduced peripheral components.
Paired with Infineon's XDPS2201 hybrid flyback controller is Infineon's latest half-bridge GaN integrated power stage IC, the IGI60F1414A1L, which supports 400W of output power and is derated in Anker 120W GaN chargers with higher efficiency and lower ramp up.
Infineon's IGI60F1414A1L integrates two GaN switches with a 140M resistance and a withstand voltage of 600V, connected in a half-bridge and with independent isolated drivers. Compared to the combination of two independent GaN switches and drivers, the PCB footprint is greatly reduced. The IGI60F1414A1L supports 400W half-bridge applications, and the built-in GaN device greatly simplifies the design of the driver circuit and can be optimized for the design.
"Powered by USB-C charging ports and multiple charging protocols, Anker GaN chargers can deliver higher power, and imagine that with just one charger, you can quickly charge all your devices, which not only brings convenience and peace of mind to consumers, but also saves more than 300,000 tons of e-waste per year," said Yang Meng, founder and CEO of Anker Innovations, at the press conference. ”
Anker's GaN 120W charger not only has the mainstream 2C1A interface configuration and strong output performance, but also takes the lead in adopting the HFB+CoolGan IPS fast charging solution composed of the industry's leading Infineon's XPDS2201+IGI60F1414A1L, which greatly reduces the size of the charger and improves energy efficiency.
Infineon's HFB+CoolGaN IPS fast charging solution integrates two GaN and driver circuits in a package with the same area as a single GaN device, with a conversion efficiency of up to 95%, reducing efficiency loss by 21% compared to the previous solution, reducing circuit complexity and volume, and bringing lower heat and temperature rise due to high efficiency.
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