Chinese name: -ga2o3 film.
Purity: 999%
Storage: -20 Refrigerated, tightly sealed, protected from light.
Retention time: 1 year.
Uses: Only for scientific research, not for human body.
Ga2O3 thin film is an important semiconductor material, which has the characteristics of wide bandgap, high breakdown field strength and excellent optoelectronic properties, and has a wide range of application prospects in extreme environments such as high temperature, high radiation and high frequency. With the continuous development of science and technology, -Ga2O3 film is more and more widely used in optoelectronics, electronics and energy.
In the field of optoelectronics, -Ga2O3 films have attracted much attention due to their excellent optoelectronic properties. It can effectively absorb and convert light energy, so it has a wide range of applications in solar cells, photodetectors and light-emitting diodes. By further optimizing the preparation process and performance of -Ga2O3 films, the performance and stability of these devices can be improved, thereby promoting the continuous development of the optoelectronic industry.
Product: Cubic boron nitride (C-BN) film.
V-doped ZNO film (ZNO:V).
Zno Bi2O3 double-layer film.
V2O5 doped ZNO ceramic multilayer film (ZNO-V2O5).
Hastelloy C-276 (nickel-chromium-molybdenum solid solution alloy) film.
The products mentioned above are intended for scientific research only and cannot be used for human or other purposes.