Chinese name: Na-N co-doped p-type ZNO film.
Purity: 999%
Storage: -20 Refrigerated, tightly sealed, protected from light.
Retention time: 1 year.
Uses: Only for scientific research, not for human body.
As a wide bandgap semiconductor material, ZNO has excellent optical, electrical and chemical properties, and has a wide range of application prospects in optoelectronic devices, sensors, solar cells and other fields. However, the p-type doping of Zno has always been a difficult point in research. In recent years, Na-N co-doping technology has been proven to be an effective means to successfully prepare p-type Zno films with high conductivity.
The main process steps for the preparation of Na-N co-doped P-type ZNO films include substrate selection, surface pretreatment, film growth and post-treatment. In terms of substrate selection, commonly used substrates are glass, silicon wafers and ceramics, etc., which need to be selected according to specific application needs. Surface pretreatment includes cleaning and surface activation to enhance the adhesion between the film and the substrate. Thin films are grown using techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD) or sol-gel method. The post-processing stage is mainly annealed to activate the dopant and optimize the film properties.
Product: Fe-doped TiO2 film.
PT film. tini film.
GEC films.
GE monolayer membranes.
Polycrystalline silicon germanium thin film (SIGE).
The products mentioned above are intended for scientific research only and cannot be used for human or other purposes.