The annual International Solid-State Circuits Conference (ISSCC) is a window into the evolution of flash memory technology. This year's ISSCC conference will be held in San Francisco next month, and the schedule of meetings that have been made public will give you a sneak peek at some of the new products and technologies that flash memory manufacturers will be announcing.
Samsung will introduce 280-layer stacked 3D QLC flash memory at ISSCC. Its highlight is 28 per square millimeterUltra-high storage density of 5GB. In recent years, the single-die capacity of flash memory has basically been at the 1TB level, which improves storage density and reduces manufacturing costs by reducing the chip area. In the current production of flash memory, the 3D QLC flash memory used in the Genic Ti600 is measured at 20 mm²62GB (19 per square millimeter.)8GB) storage density.
Samsung also mentioned an IO speed of 3,200 mt, which exceeds Samsung's V9 QLC target of 2,400 S announced in 2022. Corresponding to the SSD, the 4-channel main controller with 3200MT S flash memory is expected to achieve 10GB of sequential read capability. That said, many of the current 8-lane flagship PCIe 5The speed that can be achieved by 0 SSD is expected to be achieved by mainstream or even entry-level 4-channel SSDs in the future.
While QLC is considered the future of NAND flash, TLC will remain the preferred choice for high-performance flash. Micron will introduce a 2YY-layer stacked 3D TLC flash memory at ISSCC next month, with a single-die capacity of 1TB, but the write bandwidth has been increased to 300MB s.
At present, Micron has launched 232-layer stacked 3D TLC flash memory, and the IO speed has grown from 1600MT S and 2000MT S to the current 2400MT S. 2yy (no specific number of tiers specified, should be more than 232) tier 3D TLC flash puts the focus on write bandwidth. The 300MB S figure may not be intuitive, and Micron has not disclosed the write bandwidth of 232 layers of 3D TLC, but the data of Kioxia BICS6 can be used as a comparison: 160MB S.
Judging from the data published at the ISSC over the years, not every product will eventually be mass-produced as is. However, the increase in storage density, IO interfaces, and write speed is undoubtedly a trend in the development of flash memory technology in the future.