South Korean media "The Korea Times" (The Korea Times) reported that Samsung has set up a new laboratory in the United States to focus on developing the next generation of 3D DRAM.
The new lab, located in Silicon Valley's Device Solutions America (DSA) division, is responsible for Samsung's semiconductor production in the U.S. and is working on developing an upgraded version of DRAM that will enable Samsung to lead the global 3D DRAM market, according to sources.
Samsung said in October last year that it was preparing a new 3D structure for sub-10nm DRAM, enabling a larger single-chip capacity of more than 100 Gigabits.
3D DRAM refers to DRAM manufactured using a "3D" process, which makes better use of physical hardware limitations by stacking chips, memory modules, etc. For example, 3D caching is a manufacturing process that stacks a common CPU L3 cache to increase the memory capacity of the carrier board.
Samsung's work on 3D DRAM is helping to drive memory capacity, and the use of 3D stacking technology to increase L3 cache in the CPU manufacturing process has proven to be an effective way to significantly increase capacity and performance to cope with constrained workloads.
Samsung's continued advancement of 3D DRAM will help the entire computing market, increase high-end memory capacity, reduce entry-level costs, and bring significant advancements to PC hardware, and server operators are expected to benefit first.
Header image**: Samsung).