On January 30, Samsung has announced that it will introduce its 280-layer stacked 3D QLC NAND Flash at the IEEE International Solid-State Circuit Conference (ISSCC) held in San Francisco, USA from February 18 to February 22, which will be the new 3D QLC NAND Flash with the highest storage density so far.
According to the theme of Samsung's upcoming presentation, "A 280-Layer 1TB 4B Cell 3D-NAND Flash Memory with A 28."5gb / mm² areal density and a 3.2GB S High-Speed 10 Rate, its 280-layer stacked 1TB QLC 3D QLC NAND flash memory will have the following features:
First of all, the 280-layer 3D NAND Flash will be made up of 280-layer storage units stacked vertically, which further increases the density of storage.
Secondly, the capacity of a single chip reaches 1TB, or 1024 Gbit.
Third, "4b cell" means that each memory cell can store 4 binary bits, i.e. 0. per data usage25 storage units.
Fourth, "28"5GB mm" refers to "storage density", which means that a storage unit can store 28 per square millimeter of areaWith 5GB of data, this storage density is extremely high.
Fifth, "3."2GB S High-Speed 10 Rate" means that the flash memory chip can read data at a maximum speed of 32GB S, High-Speed 10 Rate may refer to a specific interface standard or transport protocol.
According to Samsung's previous PPT, its QLC NAND V9 flash memory can provide up to 8TB of M2 hard disks, io speed more than a single chip 2At 4Gbps, raw performance is in direct competition with today's TLC flash. However, the performance of specific listed products still needs to be continuously observed.
Editor: Xinzhixun-Lin Zi.