Toshiba introduces a new generation of DTMOSVI high-speed diode-based power MOSFETs to help improve power efficiency.
Toshiba Electronic Devices & Storage Corporation ("Toshiba") today announced the introduction of high-speed diode-type power MOSFETs, DTMOSVI (HSD), in the next-generation[1] DTMOSVI series of superjunction structures for switching power supplies for applications including data centers and photovoltaic power conditioners. The first two 650 V N-channel power MOSFETs, the TK042N65Z5 and TK095N65Z5, are available for mass shipment today.
The new products use high-speed diodes to improve the critical reverse recovery[2] characteristics in bridge and inverter circuit applications. Compared to the standard DTMOSVI, the new product reduces the reverse recovery time (TRR) by 65 % and the reverse recovery charge (QRR) by 88 % (test condition: -didr DT 100 A s).
The DTMOSVI (HSD) process used in the new product improves the reverse recovery characteristics of the Toshiba DTMOSIV series (DTMOSIV(HSD)) and has a lower drain cut-off current at high temperatures. In addition, the new product has a lower figure of merit of "drain-source on-resistance gate-drain charge". Compared to Toshiba's existing TK62N60W5[4] [5] device, the TK042N65Z5 has a high-temperature drain cut-off current of approximately 90 % [3] and a 72 % reduction in drain-to-source on-resistance gate-to-source charge. This will lead to lower power losses and help improve product efficiency. In 1In the 5 kW LLC circuit [6] test, the power efficiency improvement of the TK042N65Z5 is about 04 %。
From now on, customers can obtain a reference design using the TK095N65Z5 on Toshiba**"16 kW server power supply (upgrade)". In addition, Toshiba provides tools that support the design of switching power supply circuits. In addition to the G0 SPICE model, which can quickly verify the function of the circuit, a high-precision G2 SPICE model that accurately reproduces the transient characteristics of the circuit is now available.
Toshiba plans to expand the DTMOSVI (HSD) product line in the future. The new devices will be available in TO-220 and TO-220SIS through-hole packages, as well as TOLL and DFN 88 surface-mount packages.
In addition, Toshiba will continue to expand the DTMOSVI series product line in addition to the 650 V and 600 V products already launched and the new high-speed diode type products to improve the efficiency of switching power supplies and contribute to energy saving in equipment.
QR Comparison of Standard and High-Speed Diode 650 V Power MOSFETs.
Comparison of the IDSS 150 °C TRR of the TK095N65Z5 and the TK35N65W5.
Comparison of RDS(ON) QGD of TK042N65Z5 and TK62N60W5.
Comparison of the efficiency of the TK042N65Z5 and the TK62N60W5.
Reference designs for the use of new products"16 kW server power supply (upgrade)".
The appearance of the board.
Simple block diagram.
Application: Industrial equipment.
Switching power supplies (data center servers, communication equipment, etc.).
Electric vehicle charging stations.
Power conditioner for photovoltaic generator sets.
Uninterruptible power supply system.
Features: The new generation of DTMOSVI series high-speed diode type products.
Reverse recovery time for high-speed diode type products:
TK042N65Z5 TRR 160 ns (typical).
TK095N65Z5 TRR 115 ns (typical).
High-speed switching time with low gate leakage charge:
TK042N65Z5 QGD 35 NC (typical).
TK095N65Z5 QGD 17 NC (typical).
Main specification: TA 25 °C unless otherwise stated).
Notes: 1] Toshiba survey as of February 22, 2024.
2] The switching action of the MOSFET body diode switching from forward bias to reverse bias.
3] Values measured by Toshiba:
The new product TK042N65Z5 is 02 mA (test conditions: VDS 650 V, VGS 0 V, TA 150 °C).
The existing product TK62N60W5 is 19 mA (test conditions: VDS 600 V, VGS 0 V, TA 150 °C).
4] 600 V DTMOSIV (HSD) series.
5] Values are measured by Toshiba.
Test conditions: TK62N60W5
rds(on)：id＝30.9 a、vgs＝10 v、ta＝25 °c
qgd：vdd＝400 v、vgs＝10 v、id＝61.8 a、ta＝25 °c
tk042n65z5
rds(on)：id＝27.5 a、vgs＝10 v、ta＝25 °c
qgd：vdd＝400 v、vgs＝10 v、id＝55 a、ta＝25 °c
6] Values are measured by Toshiba.
Test conditions: VIN 380 V, VOUT 54 V, TA 25 °C
7] vdss＝600 v
To learn more about the new products, please visit the following**:
tk042n65z5
tk095n65z5
For more information on Toshiba's MOSFET products, please visit the following**:
mosfet
Company names, product names, and service names mentioned herein may be trademarks of their respective companies.
The information in this document, such as product ** and specifications, service content and ***, is still current information as of the date of announcement, but is subject to change without notice.