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IT Home reported on March 4 that, according to Theelec, Samsung is considering applying Molded Fill (MUF) technology in its next-generation DRAM. Samsung recently tested an MR MUF process for 3D stacked (3DS) memory, which has seen an increase in throughput compared to TC NCF, but some deterioration in physical characteristics.
After testing, the company concluded that MUFs are not suitable for high-bandwidth memory (HBM) but are ideal for 3DS RDIMMs, which are currently manufactured using through-silicon via (TSV) technology and are primarily used in servers.
MUF is a TSV process in which thousands of tiny holes are punched into a semiconductor and then the upper and lower layers of semiconductors are connected and injected between the semiconductors, and its role is to firmly hold and connect multiple vertically stacked semiconductors.
Prior to this, Samsung had already used hot-pressed non-conductive film (TC NCF) technology in its existing registered dual in-line memory modules (RDIMMs), while MUF is the technology used by SK hynix to manufacture high-bandwidth memory (HBM) (specifically Mass Re-flow Molded Underfill, or MR-MUF for short).
According to an IT home inquiry, MUF is an epoxy resin molding compound that has attracted more and more attention in the chip industry since SK hynix's successful application to HBM production, and the industry believes that the material is considered to be more advantageous in avoiding wafer warpage.
According to the data, the compounds used by SK hynix were developed in collaboration with NAMICS, while the sources said that Samsung plans to develop its own MUF compounds in collaboration with Samsung SDI, and has already ordered the molding equipment required for MUF applications.
Samsung is the world's largest memory semiconductor company, and if Samsung also introduces MUF, it may become a mainstream technology and the semiconductor materials market will also change dramatically, but a Samsung Electronics official responded that "we cannot confirm our internal technology strategy."
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