Presentation of the results.
For two-dimensional (2D) layered material heterojunctions, band-aligned dynamic modulation allows for the design of devices with flexible and versatile applications.
In view of this, recently, Associate Professor Zhong Mianzeng and Professor He Jun of Central South University and Researcher Wei Zhongming (co-corresponding author) of the Institute of Semiconductors of the Chinese Academy of Sciences have jointly proposed a device structure based on Mote2 SNSE2 field-effect transistor. By applying a bias voltage to the electrostatic gate, the gate voltage is adjusted from negative to positive, so that the heterojunction is changed from type III band alignment to type II band alignment. In this paper, the working mechanism and device performance of heterojunctions with different band alignments are studied.
The device has a good detection range (from ultraviolet to infrared), detection rate (242 109 Jones) and speed (13 ms)。At the positive gate voltage, a higher ratio of photocurrent to dark current is achieved (2 103). To further demonstrate the potential of high-performance devices, this paper confirms their reliability by demonstrating their performance in image recognition using deep learning.
*Guide. 
Figure 1Crystal structure of Mote2 SNSE2 heterojunction.
Figure 2Electrical transport characteristics.
Figure 3Photoelectric characterization of a heterojunction photodetector at vg=0 V.
Figure 4Optical transmission characteristics.
Figure 5Device application.
Bibliographic information. dynamic band-alignment modulation in mote2/snse2 heterostructure for high performance photodetector
adv. optical mater., 2024, doi:10.1002/adom.202303088）