CVD (Chemical Vapor Deposition).It is the most widely used technology in the semiconductor industry for depositing a wide range of materials, including a wide range of insulating materials, most metal materials and metal alloy materials.
Theoretically, it is simple: two or more gaseous raw materials are introduced into a reaction chamber, and then they chemically react with each other to form a new material, which is deposited on the surface of the wafer. A good example of this is the deposited silicon nitride film (Si3N4), which is formed by the reaction of silane and nitrogen.
Chemical vapor deposition is a traditional technology for preparing thin films, and its principle is to use gaseous precursor reactants to decompose certain components in the gaseous precursor through chemical reactions between atoms and molecules, and form a thin film on the matrix. Chemical vapor deposition includes atmospheric chemical vapor deposition, plasma-assisted chemical deposition, laser-assisted chemical deposition, metal-organic compound deposition, etc. However, with the development of technology, CVD technology is also constantly innovating, and there are many specialized technologies for certain uses.
Plasma-enhanced chemical vapor deposition (PECVD).It is a method of epitaxy in chemical vapor deposition to excite gas to produce low-temperature plasma and enhance the chemical activity of reactive substances. This method allows the formation of solid films at lower temperatures. For example, in a reaction chamber, the matrix material is placed on the cathode, the reaction gas is introduced to a lower air pressure (1 600Pa), the matrix is maintained at a certain temperature, and a glow discharge is produced in a certain way, the gas near the matrix surface is ionized, the reaction gas is activated, and the cathodic sputtering is generated on the matrix surface, so as to improve the surface activity. On the surface, there are not only the usual thermochemical reactions, but also complex plasma chemical reactions. The deposition film is formed by the combined action of these two chemical reactions. The main methods of excitation glow discharge are: radio frequency excitation, DC high voltage excitation, pulse excitation and microwave excitation.
PECVD Equipment (Plasma Enhanced Chemical Vapor Deposition)-Pengcheng Semiconductor Technology (Shenzhen)**
The main advantages of plasma-enhanced chemical vapor deposition are low deposition temperatures and low impact on the structure and physical properties of the matrixThe thickness and composition uniformity of the membrane are good;The membrane tissue is dense and there are few pinholes;Strong adhesion of the film layer;It has a wide range of applications and can prepare various metallic, inorganic and organic films.
Thin film deposition renderings.
Thin film deposition renderings.
Hot filament chemical vapor deposition
Hot filament CVD uses low-pressure vapor deposition at high temperatures, where hydrocarbons undergo a chemical reaction at high temperatures to form film precursors, which are deposited on the surface of the sample to form an emery film when the sample temperature is suitable. The thickness and composition of the film formed by low-pressure chemical vapor deposition are relatively uniform, and the film layer is dense.
The basic characteristics of CVD chemical vapor deposition are:
Produces chemical changes (chemical reactions or thermal decomposition);
All materials in the membrane are ** external sources;
The reactants must be involved in the reaction in the form of the gas phase.
The basic chemical reactions of hot filament CVD are thermal decomposition of compounds (chemical bond breaking) and photodecomposition (using radiant energy to break chemical bonds of compounds). When the sample temperature is 600-1000 degrees Celsius, the hydrocarbon active group reacts to form a crystal nucleus, the crystal nucleus forms an island, and the island forms a continuous film, and the reaction by-products leave the surface of the sample and flow out of the growth chamber.
Hot wire CVD diamond equipment-Pengcheng Semiconductor Technology (Shenzhen)**
Pengcheng SemiconductorR&D, design and manufacturingHot wire CVD diamond equipment (hot wire chemical vapor deposition CVD).It is divided into two categories: experimental equipment and production equipment.
The equipment is mainly used for the R&D and production of microcrystalline and nanocrystalline diamond films. It can be used for the R&D and production of mechanical, thermal, optical and acoustic diamond products.
It can manufacture large-size diamond multicrystalline wafers for heat sink heat sink of high-power devices, high-frequency devices and high-power lasers.
It can be used to produce anti-corrosion and wear-resistant hard coatingsDiamond products for sewage treatment in the field of environmental protection.
It can be used for the preparation of diamond films for flat workpieces, and can also be used for the preparation of diamond hard coatings on the surface of tools or other irregular surfaces.
It can be used for the R&D and production of solar thin-film cells.
Workpiece size: Dimensions for circular plane work: up to 600mm.
The width of the rectangular working size is 1000 mm and the length can be determined according to the length of the coating chamber (e.g. workpiece length 1500 mm).
Equipped with a water-cooled sample stage.
It can be coated on one or both sides.