Recently,Xingan TechnologyLaunched a heavyweight for the new energy fieldsic mosfetThe new device product (N2M120007PP0) has been realizedIndustry-leading ultra-low on-resistance specification of 1200V 7m
As we all know, the electric drive system is the most central part of an electric vehicle. In motor drive systems, MOSFETs are often used as key components of motor inverters, converting DC power to AC power to drive three-phase motors. In this process, the efficiency of the conversion from electrical energy to mechanical energy, i.e., the efficiency of the electric drive system, is extremely important.
Compared with traditional silicon-based MOSFETs, SiC MOSFETs benefit from the blessing of SiC materials, which have lower on-resistance, lower switching losses, higher breakdown electric field strength and high temperature stability, which can make the motor drive system have higher efficiency, higher power density, and longer service life.
At present, many electric vehicles have begun to migrate to 800V high-voltage platforms, which require 800V-1200V power components to support. More efficient 1200V SiC MOSFETs are essential components for the 800V high-voltage platform of electric vehicles.
For SiC MOSFETs, the on-resistance is an important performance indicator that reflects the loss and efficiency of the device in the on-state state. At 1200V operation, SiC MOSFETs typically have lower on-resistance, resulting in higher power density and lower energy loss.
Although the on-resistance of some international manufacturers of SiC MOSFET can be controlled below 1200V 3M, most of the domestic SIC MOSFET manufacturers are still above 1200V 10M due to their relatively late start. Obviously, Xingan's 1200V 7M SIC MOSFET chip has reached the industry-leading level.
According to reports, this new product is based onAutomotive-grade process platform, adoptionAdvanced structure and manufacturing processIt is compatible with 18V gate voltage driver and TO-247-4L PLUS package, which effectively improves the performance of domestic silicon carbide devices. New product targetingThe main drive of new energy vehiclesand other power semiconductor switch applications that urgently need high voltage, high current and low loss, help the rapid upgrading of the new energy field, and contribute to the realization of the national goal of "carbon peak and carbon neutrality".
Xingan's new products use excellentto-247-4l plusThe package, with the advantages of Kelvin source pole and low thermal resistance, can significantly reduce switching losses and improve the heat dissipation performance of the device.
The working current of the new product can reach300aThe above has a positive temperature coefficient, which can easily realize high-current paralleling. At the same time, the leakage current of the new Xingan product is extremely low (<1μa@1200v), with superior high-voltage blocking characteristics.
Partial static characteristics of the N2M120007PP0 device.
The new products have completed a series of dynamic tests and reliability assessmentshtrb、phtgb、nhtgb、h3trbetc.), normal dynamic switching under different conditions.
N2M120007PP0 device switching waveform at 800V 200A.
In addition to single-tube packages such as TO-247-4L Plus, XinSense's 1200V 7M SIC MOSFET chips can also be packagedCustomized power modulesIt is convenient to widely realize its application in new energy fields such as automobile main drive.
Xingan Technology focuses on the technological breakthrough innovation and product development and production of third-generation semiconductor silicon carbide power devices and power modules, and is committed to becoming a leading domestic and internationally influential power semiconductor change leader. Xingan Technology has highly customized technical capabilities in the whole process from devices to modules to applications, which can match customer needs in various fields and help customers quickly establish differentiated competitive advantages.
Xingan Technology has been650v、1200v、1700vMass production of dozens of silicon carbide devices and modules has been completed on the isovoltage platform. Among them, 1200V SiC MOSFET products have:80mmmωUntil7mωand other on-resistance specifications, module products are benchmarkedeasypack、62mm、econodualand other package forms. The 1200V 80M SIC MOSFET has passedaec-q101The automotive-grade reliability certification also marks that a number of lower on-resistance devices developed on this process platform have reached the automotive-grade reliability level.
Editor: Xinzhixun-Rogue Sword.