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At the IEEE International Electronic Devices Conference (IEDM 2023) 2023, Intel once again demonstrated its leadership in semiconductor technology. At the conference, Intel revealed a number of new breakthrough technologies, including 3D stacked CMOS transistors, Ga-on-Silicon wafer integration, and transition metal dichalcogenides (** transistors). These technologies not only herald the advancement of Moore's Law, but also demonstrate Intel's leadership in the semiconductor industry.
First, Intel showcased its 3D stacked CMOS transistor technology. This technology uses vertically stacked complementary field-effect transistors (CFETS) with gate pitches that can be scaled down to 60nm. This innovative design combines Powervia and Direct Backside Contact technologies to improve not only area efficiency, but also performance benefits. The successful demonstration of this technology underscores Intel's leadership in the field of all-surround gate transistors (GAA FETS).
Secondly, Intel also demonstrated the technology of integrating silicon transistors and gallium nitride transistors on the same 300mm wafer. This innovation opens up a viable path to the fabrication of GaN-on-Silicon wafers. The success of this demonstration marks a breakthrough in the integration of silicon and gallium nitride. In addition, Intel showcased a high-performance, LSI-powered solution called "DRGAN".
Finally, Intel also showcased a new transition metal dichalcogenide (** transistor. This transistor allows the physical gate length of the transistor to be reduced to less than 10 nanometers. In addition to this new 2D channel material, Intel is also showcasing two related technologies that are the first to be realized: the GAA 2D transition metal dichalcogenide PMOS transistor and the 2D transistor fabricated on a 300mm wafer. The display of these technologies marks Intel's innovative and forward-looking capabilities in the field of semiconductor technology.
Overall, Intel's presentation at IEDM 2023 once again proves its leadership and innovation in the field of semiconductor technology. These new technological breakthroughs will not only promote the continued development of Moore's Law, but also open up new possibilities for the future semiconductor industry. As these technologies are further developed and applied, we look forward to seeing more radical innovations emerge in the semiconductor industry in the future."