Silicon carbide (SiC) is a high-performance ceramic material with the advantages of high strength, high hardness, high heat resistance, corrosion resistance, etc., so it is widely used in harsh environments such as high temperature, high pressure, and corrosion. In some application scenarios, SiC materials need to be bonded with other materials to achieve more complex structural design and mechanical properties, which requires SiC bonding process. Among the bonding processes of SiC, the silicon carbide seed crystal bonding process is the most commonly used and effective method.
1. The basic principle of silicon carbide seed crystal bonding technology is a technology that uses silicon carbide particles to be melted at high temperature to bond SiC.
First, in the heating equipment, the adhesive part of the SiC is placed on top of the seed crystal adhesive, which is exposed to high temperatures. Second, silicon carbide particles are gradually added to the upper part of the seed crystal binder, and the bonded parts are placed in it. Then, at high temperatures, the silicon carbide particles react with the bonded parts of the SiC, where they are melt mixed, and the tangent surface becomes a bonded surface. Next, the ultrasonic spraying equipment improves the flow of the binder and promotes an even distribution of pressure. Finally, through operations such as cooling and heating up, the bonding material is formed into a stable chemical bond, and finally the bonding of silicon carbide material is realized.
2. Advantages of silicon carbide seed crystal bonding technology:
1) High bonding strength: easy to achieve strong bonding, high bonding strength, across the interface, sealing and bonding between different hierarchies.
2) Good adhesive compatibility: Silicon carbide and seed crystal binders have similarities in chemical properties and crystal structure, therefore, seed crystal binders can be better compatible with silicon carbide while maintaining their function and performance during long-term application.
3) Low bond residue: The use of silicon carbide seed crystal bonding technology can achieve the preparation of low residual bond molecules, and at the same time, it can be used for a long time in high temperature and corrosion areas.
4) High production efficiency: Silicon carbide seed crystal bonding technology makes it possible to prepare SiC in large size, high precision and quickly, which greatly improves production efficiency.
3. Improvement and adjustment of silicon carbide seed crystal bonding process provides an effective way to improve the bonding problem between SiC and other materials.
1) Increase the thickness of the adhesive material appropriately to prevent the instability of the bond caused by the different melting points of the material.
2) Combined with the characteristics of SiC materials, adjust the bonding temperature and control the reaction time to ensure that the material with stable chemical and physical properties is produced.
3) Regular process verification and shell quality inspection, so as to improve the quality and stability of the bond. Semiconductors